au.\*:("OZTURK, Mehmet C")
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Tuning of the Nickel Silicide Schottky Barrier Height on p-Type Silicon by Indium ImplantationALPTEKIN, Emre; OZTURK, Mehmet C.IEEE electron device letters. 2009, Vol 30, Num 12, pp 1272-1274, issn 0741-3106, 3 p.Article
Schottky Barrier Height of Nickel Silicide Contacts Formed on Si1―xCx Epitaxial LayersALPTEKIN, Emre; OZTURK, Mehmet C.IEEE electron device letters. 2009, Vol 30, Num 12, pp 1320-1322, issn 0741-3106, 3 p.Article
NixPt1―xSi/n-Si contacts with sub-0.1 eV effective Schottky barrier heights obtained by sulfur segregationALPTEKIN, Emre; OZTURK, Mehmet C.Microelectronic engineering. 2010, Vol 87, Num 11, pp 2358-2360, issn 0167-9317, 3 p.Article
Nickel germanosilicide contacts formed on heavily boron doped Si1-xGex source/drain junctions for nanoscale CMOSJING LIU; OZTURK, Mehmet C.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 7, pp 1535-1540, issn 0018-9383, 6 p.Article
Tuning of the Platinum Silicide Schottky Barrier Height on n-Type Silicon by Sulfur SegregationALPTEKIN, Emre; OZTURK, Mehmet C; MISRA, Veena et al.IEEE electron device letters. 2009, Vol 30, Num 4, pp 331-333, issn 0741-3106, 3 p.Article
Schottky Barrier Height of Erbium Silicide on Si1―xCxALPTEKIN, Emre; OZTURK, Mehmet C; MISRA, Veena et al.IEEE electron device letters. 2009, Vol 30, Num 9, pp 949-951, issn 0741-3106, 3 p.Article
Platinum Germanosilicide Contacts Formed on Strained and Relaxed Si1―xGex LayersALPTEKIN, Emre; KIRKPATRICK, Casey Joe; MISRA, Veena et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 6, pp 1220-1227, issn 0018-9383, 8 p.Article
Advanced Si1-xGex source/drain and contact technologies for sub-70 nm CMOSÖZTÜRK, Mehmet C; JING LIU; MO, Hongxiang et al.IEDm : international electron devices meeting. 2002, pp 375-378, isbn 0-7803-7462-2, 4 p.Conference Paper
In situ selectivity and thickness monitoring during selective silicon epitaxy using quadrupole mass spectrometry and waveletsRYING, Eric A; ÖZTÜRK, Mehmet C; BILBRO, Griff L et al.IEEE transactions on semiconductor manufacturing. 2005, Vol 18, Num 1, pp 112-121, issn 0894-6507, 10 p.Article
Arsenic redistribution during rapid thermal chemical vapor deposition of TiSi2 on SiHUA FANG; OZTÜRK, Mehmet C; O'NEIL, Patricia A et al.Journal of the Electrochemical Society. 2001, Vol 148, Num 2, pp G43-G49, issn 0013-4651Article
Advanced cmos devices: Part II - exploratory devices and approachesWONG, H.-S. Philip.Proceedings - Electrochemical Society. 2005, pp 13-22, issn 0161-6374, isbn 1-56677-463-2, 10 p.Conference Paper
Initial oxidation of sige alloy materials : The use of sub- bonded states as an indicator of the interfacial processesJACCODINE, R. J; KILPATRICK, S. J.Proceedings - Electrochemical Society. 2005, pp 542-553, issn 0161-6374, isbn 1-56677-463-2, 12 p.Conference Paper
Short channel schottky barrier TFTs with metal gate and high dielectric constant gate dielectricHUANG, Chih-Feng; TSUI, Bing-Yue.Proceedings - Electrochemical Society. 2005, pp 376-382, issn 0161-6374, isbn 1-56677-463-2, 7 p.Conference Paper
Ultra shallow junction formation by flash annealing : The challenges aheadFOGGIATO, John; WOO SIK YOO.Proceedings - Electrochemical Society. 2005, pp 76-82, issn 0161-6374, isbn 1-56677-463-2, 7 p.Conference Paper
Advanced gate stack, source/drain and channel engineering for Si-based CMOS : naw materials, processes, and equipment (Quebec PQ, 16-18 May 2005)Gusev, Evgeni P; Iwai, Hiroshi; Öztürk, Mehmet C et al.Proceedings - Electrochemical Society. 2005, issn 0161-6374, isbn 1-56677-463-2, XV, 634 p, isbn 1-56677-463-2Conference Proceedings
Advanced CMOS devices: Part I conventional devices and technology optionsWONG, H.-S. Philip.Proceedings - Electrochemical Society. 2005, pp 3-12, issn 0161-6374, isbn 1-56677-463-2, 10 p.Conference Paper
Nickel thin film deposition using Ni (PF3)4 for LSI electrodeISHIKAWA, Masato; MACHIDA, Hideaki; OGURA, Atsushi et al.Proceedings - Electrochemical Society. 2005, pp 612-619, issn 0161-6374, isbn 1-56677-463-2, 8 p.Conference Paper
High purity iridium thin films depositions using the inorganic IrF6DUSSARRA, Christian; GATINEAU, Julien.Proceedings - Electrochemical Society. 2005, pp 354-359, issn 0161-6374, isbn 1-56677-463-2, 6 p.Conference Paper
Suppression of interfacial reactions in tungsten /hafina /germanium structure by water vapor dischargeMURAOKA, Kouichi.Proceedings - Electrochemical Society. 2005, pp 523-528, issn 0161-6374, isbn 1-56677-463-2, 6 p.Conference Paper
Optimizing channel strain and dislocations in PMOS transistors with local epitaxial SiGeCHIDAMBARAM, P. R; CHAKRAVARTHI, Srinivasan; MACHALA, Charles et al.Proceedings - Electrochemical Society. 2005, pp 437-445, issn 0161-6374, isbn 1-56677-463-2, 9 p.Conference Paper
Shallow doping of silicon from an adsorbed phosphorus surface layerKALKOFEN, Bodo; LISKER, Marco; BURTE, Edmund P et al.Proceedings - Electrochemical Society. 2005, pp 99-106, issn 0161-6374, isbn 1-56677-463-2, 8 p.Conference Paper
Thermal processing and mobility in strained heterostructures on insulatorABERG, Ingvar; NI CHLEIRIGH, Cait; HOYT, Judy L et al.Proceedings - Electrochemical Society. 2005, pp 505-514, issn 0161-6374, isbn 1-56677-463-2, 10 p.Conference Paper
Using surface chemistry for defect engineering in ultrashallow junction formationSEEBAUER, E. G.Proceedings - Electrochemical Society. 2005, pp 33-42, issn 0161-6374, isbn 1-56677-463-2, 10 p.Conference Paper
Silicon nitride material engineering for ultra-shallow junction formationGUMPHER, John; MEHTA, Narendra; BATHER, Wayne et al.Proceedings - Electrochemical Society. 2005, pp 91-98, issn 0161-6374, isbn 1-56677-463-2, 8 p.Conference Paper
Suppressed boron diffusion in bulk silicom below strained (100) Si1-xGex surfaces during nitrogen annealingCARROLL, M. S; SUH, Y. S; LEVY, R et al.Proceedings - Electrochemical Society. 2005, pp 446-454, issn 0161-6374, isbn 1-56677-463-2, 9 p.Conference Paper
